EE 441 EE441 LAB REPORT 3 (PSU)

EE 441 EE441 LAB REPORT 3 (PSU)



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EE 441 Lab Report 3 Answers -2020 (Penn State University)
Introduction:
In this lab, we firstly overview lithography and Oxide Etch from last week. Then we created the source and drain regions on the wafer, we used a phosphorus wafer to create a heavily doped N++ region at the surface of the wafer. The goal of solid source diffusion is to create a junction with substrate at a depth bigger than 0.5 μm, and maintain a surface concentration over .










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